| PART |
Description |
Maker |
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
(IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| 62WV5128ALL IS62WV5128ALL-70T2 IS62WV5128ALL-70T2I |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| N08L163WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| BH616UV8011TIP70 BH616UV8011AIP70 BH616UV8011TIP55 |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| N08L63W2AB27I N08L63W2AB27IT N08L63W2AB7I N08L63W2 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
|
ON Semiconductor
|
| N08L163WC2CZ1-55IL N08L163WC2C N08L163WC2CZ1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N08L1618C2AB2 N08L1618C2A N08L1618C2AB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N08M1618L1A |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit
|
AMI SEMICONDUCTOR
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
